Band gap controlled H loss from passivated Hg1-xCdxTe (MCT) wafers under intense electronic excitations

We report here loss of H monitored by on-line elastic recoil detection analysis (ERDA) technique from passivated Hg1-xCdxTe (MCT) wafers due to irradiation by 80 MeV Ni9+, 120 MeV Au15+ and 200 MeV Ag10+. The loss of H is more in case of the wafer irradiated by Ag ions as compared to other two because of higher electronic energy loss (Se). For same Se value, H loss is more in case of the wafer having x = 0.29 as compared to the one having x = 0.204. This is due to higher band gap of the former as compared to the later, which is an important data for proper use of these materials as IR detector in intense radiation zone. These results are explained on the basis of thermal spike model of ion-solid interaction.