Photoluminescence of delta-doped ZnSe:(Te,N) grown by molecular beam epitaxy

We have studied the low temperature photoluminescence (PL) of a delta-doped ZnSe:(Te,N) system using two different types of samples, one with single delta layers separated by undoped spacers and the other with three adjacent delta layers in each doping cycle. We have concluded that both Te and N participate in radiative recombination. We observe a relatively low PL efficiency (compared to samples without N) for these samples, and we suggest that Auger recombination is a likely mechanism, although a role of slow donor--acceptor pair PL and consequent nonradiative processes cannot be ruled out