A novel switched capacitor bandgap reference with a correlated double sampling structure
Creators
- 1. System-on-Chip Laboratory, Institute of Microelectronics, Peking University, Beijing 100871 (China)
Description
A switched capacitor bandgap voltage reference with correlated double sampling structure embedded in a temperature sensor is implemented in a standard 0.35 μm CMOS process. Due to the smaller change of the op-amp's output voltage, this topology is very suitable for low power applications. In addition, errors caused by the finite op-amp gain, input offset voltage, and 1/f noise are eliminated with the correlated double sampling technique. Additionally, two-level process calibration techniques are designed to minimize the process spread. Finally, a method of getting a full period valid reference voltage output is discussed and experimental results are provided to verify the effectiveness of the proposed structure. (semiconductor integrated circuits)
Availability note (English)
Available from http://dx.doi.org/10.1088/1674-4926/34/2/025009Additional details
Identifiers
Publishing Information
- Journal Title
- Journal of Semiconductors
- Journal Volume
- 34
- Journal Issue
- 2
- Journal Page Range
- [4 p.]
- ISSN
- 1674-4926
INIS
- Country of Publication
- United Kingdom
- Country of Input or Organization
- International Atomic Energy Agency (IAEA)
- INIS RN
- 44061505
- Subject category
- S46: INSTRUMENTATION RELATED TO NUCLEAR SCIENCE AND TECHNOLOGY;
- Descriptors DEI
- CALIBRATION; CAPACITORS; ELECTRIC POTENTIAL; GAIN; INTEGRATED CIRCUITS; SAMPLING; SEMICONDUCTOR MATERIALS; SENSORS
- Descriptors DEC
- AMPLIFICATION; ELECTRICAL EQUIPMENT; ELECTRONIC CIRCUITS; EQUIPMENT; MATERIALS; MICROELECTRONIC CIRCUITS