Published February 2013 | Version v1
Journal article

A novel switched capacitor bandgap reference with a correlated double sampling structure

  • 1. System-on-Chip Laboratory, Institute of Microelectronics, Peking University, Beijing 100871 (China)

Description

A switched capacitor bandgap voltage reference with correlated double sampling structure embedded in a temperature sensor is implemented in a standard 0.35 μm CMOS process. Due to the smaller change of the op-amp's output voltage, this topology is very suitable for low power applications. In addition, errors caused by the finite op-amp gain, input offset voltage, and 1/f noise are eliminated with the correlated double sampling technique. Additionally, two-level process calibration techniques are designed to minimize the process spread. Finally, a method of getting a full period valid reference voltage output is discussed and experimental results are provided to verify the effectiveness of the proposed structure. (semiconductor integrated circuits)

Availability note (English)

Available from http://dx.doi.org/10.1088/1674-4926/34/2/025009

Additional details

Publishing Information

Journal Title
Journal of Semiconductors
Journal Volume
34
Journal Issue
2
Journal Page Range
[4 p.]
ISSN
1674-4926

INIS

Country of Publication
United Kingdom
Country of Input or Organization
International Atomic Energy Agency (IAEA)
INIS RN
44061505
Subject category
S46: INSTRUMENTATION RELATED TO NUCLEAR SCIENCE AND TECHNOLOGY;
Descriptors DEI
CALIBRATION; CAPACITORS; ELECTRIC POTENTIAL; GAIN; INTEGRATED CIRCUITS; SAMPLING; SEMICONDUCTOR MATERIALS; SENSORS
Descriptors DEC
AMPLIFICATION; ELECTRICAL EQUIPMENT; ELECTRONIC CIRCUITS; EQUIPMENT; MATERIALS; MICROELECTRONIC CIRCUITS