Trace analysis by TXRF
Description
Total reflection X-Ray Fluorescence (TXRF) originally was developed for trace analysis of small residues but has become a widespread method for measuring trace surface metal contamination an semiconductor substrates. It is estimated that approximately 100 TXRF instruments are in se in the semiconductor industry worldwide, and approximately half that for residue analysis x analytical laboratories. TXRF instrumentation is available today for reaching detection limits d the order of 109 atoms/cm2. This review emphasizes some of the more recent developments in TXRF for trace analysis, in particular with the use of synchrotron x-ray sources (SR-TXRF). There is some promise of reaching 107 atoms/cm2 detection limits for surface analysis of semi-conductor substrates. 19 refs
Additional details
Publishing Information
- Journal Title
- Advances in X-Ray Analysis
- Journal Volume
- 38
- Journal Page Range
- p. 687-690.
- ISSN
- 0376-0308
- CODEN
- AXRAAA
Conference
- Title
- 43. annual Denver x-ray conference on applications of x-ray analysis.
- Dates
- 1-5 Aug 1994.
- Place
- Steamboat Spring, CO (United States).
INIS
- Country of Publication
- United States
- Country of Input or Organization
- United States
- INIS RN
- 27080365
- Subject category
- S75: CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND SUPERFLUIDITY; S37: INORGANIC, ORGANIC, PHYSICAL AND ANALYTICAL CHEMISTRY;
- Resource subtype / Literary indicator
- Conference
- Descriptors DEI
- BRAGG REFLECTION; SEMICONDUCTOR MATERIALS; TRACE AMOUNTS; X-RAY FLUORESCENCE ANALYSIS
- Descriptors DEC
- CHEMICAL ANALYSIS; MATERIALS; NONDESTRUCTIVE ANALYSIS; REFLECTION; X-RAY EMISSION ANALYSIS
Optional Information
- Secondary number(s)
- CONF-9408178--.