Published April 2010 | Version v1
Miscellaneous Open

To definition of surface state density of semiconductor-dielectric interface

  • 1. National University of Uzbekistan, Tashkent (Uzbekistan)

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Part of:
Proceedings of republic scientific conference of young scientist and talented students 'Innovation development of Uzbekistan in the view of youth', 'The role of talented youth in the development of modern physics'

Additional details

Additional titles

Original title (Russian)
К определению плотности поверхностных состояний границы раздела полупроводник - диэлектрик

Publishing Information

Publisher
Mirzo Ulugbek nomidagi Uzbekiston Millij Universiteti
Imprint Place
Tashkent (Uzbekistan)
Imprint Title
Proceedings of republic scientific conference of young scientist and talented students 'Innovation development of Uzbekistan in the view of youth', 'The role of talented youth in the development of modern physics'
Imprint Pagination
262 p.
Journal Page Range
p. 137-140
Report number
INIS-UZ--170

Conference

Title
Scientific conference of young scientist and talented students on innovation development of Uzbekistan in the view of youth, and the role of talented youth in the development of modern physics
Original Conference Title
Respublika yosh olimlar va iqtidorli talabalarniig ilmij anzhumani 'Uzbekistonning innovatsion taraqqiyoti - yoshlar nigokhida', 'Fizika fanining bugungi rivozhida iste''dodli yoshlarning urni'
Dates
8-9 Apr 2010
Place
Tashkent (Uzbekistan)

INIS

Optional Information

Notes
refs. 11, figs. 2 Imprint:Respublika yosh olimlar va iqtidorli talabalarniig ilmij anzhumani materiallari 'Uzbekistonning innovatsion taraqqiyoti - yoshlar nigokhida', 'Fizika fanining bugungi rivozhida iste''dodli yoshlarning urni'