Published May 2018 | Version v1
Journal article Metadata-only

Molecular Beam Epitaxy of Materials Interfaces with Atomic Precision

Creators

  • 1. Paul Drude Institute for Solid State Electronics (Germany)

Description

In this contribution a few selected examples to engineer material interfaces in nanostructured solids with atomic precision by means of molecular beam epitaxy (MBE) are presented. The examples include 2D electron gas systems for quantum transport and mesoscopic physics, quantum cascade lasers, Sb-based materials, ferromagnet-semiconductor heterostructures, as well as oxide materials for electronics and quantum physics. Finally, the prospects to fabricate novel van-der-Waals heterostructures are briefly discussed.

Additional details

Identifiers

DOI
10.1134/S1063782618050238;

Publishing Information

Journal Title
Semiconductors
Journal Volume
52
Journal Issue
5
Journal Page Range
p. 615-617
ISSN
1063-7826
CODEN
SMICES

INIS

Country of Publication
United States
Country of Input or Organization
International Atomic Energy Agency (IAEA)
INIS RN
49100940
Subject category
S36: MATERIALS SCIENCE;
Descriptors DEI
ACCURACY; ELECTRON GAS; INTERFACES; MOLECULAR BEAM EPITAXY; OXIDES; QUANTUM MECHANICS; VAN DER WAALS FORCES
Descriptors DEC
CHALCOGENIDES; CRYSTAL GROWTH METHODS; EPITAXY; MECHANICS; OXYGEN COMPOUNDS

Optional Information

Copyright
Copyright (c) 2018 Pleiades Publishing, Ltd.