Published February 14, 2018 | Version v1
Journal article

Mn2VAl Heusler alloy thin films: appearance of antiferromagnetism and exchange bias in a layered structure with Fe

  • 1. Department of Material Science, Graduate School of Engineering, Tohoku University, Sendai 980-8579 (Japan)
  • 2. Department of Physics, Graduate School of Science, Tohoku University, Sendai 980-8578 (Japan)
  • 3. Institute for Materials Research, Tohoku University, Sendai 980-8577 (Japan)
  • 4. High Energy Accelerator Research Organization (KEK), 1-1 Oho, Tsukuba 305-0801 (Japan)
  • 5. J-PARC Center, Japan Atomic Energy Agency, Tokai 319-1195 (Japan)
  • 6. Research Center for Neutron Science and Technology, Comprehensive Research Organization for Science and Society, Tokai 319-1106 (Japan)

Description

Mn2VAl Heusler alloy films were epitaxially grown on MgO(1 0 0) single-crystal substrates by ultra-high-vacuum magnetron sputtering. A2- and L21-type Mn2VAl order was controlled by the deposition temperature. A2-type Mn2VAl films showed no spontaneous magnetization, while L21-type Mn2VAl films showed ferrimagnetic behaviour with a maximum saturation magnetization of 220 emu cm−3 at room temperature (RT). An antiferromagnetic reflection was observed with neutron diffraction at RT for an A2-type Mn2VAl film deposited at 400 °C. A bilayer sample of the antiferromagnetic A2-type Mn2VAl and Fe showed an exchange bias of 120 Oe at 10 K. (paper)

Availability note (English)

Available from http://dx.doi.org/10.1088/1361-6463/aaa41a

Additional details

Identifiers

Publishing Information

Journal Title
Journal of Physics. D, Applied Physics
Journal Volume
51
Journal Issue
6
Journal Page Range
[7 p.]
ISSN
0022-3727
CODEN
JPAPBE