Step by step method of implantation of boron ions of silicon during rapid thermal annealing

Residual damages in silicon B⁺ implanted using the multistep method and rapid thermal annealing (RTA) were studied. Unlike thermal annealing, the multistep method at RTA combined with the effect of defect annihilation on substitutional impurities (Watkins effect) do not provide lowering of the residual damage concentration. This is explained by a high instantaneous concentration of the point defects formed from radiation defect complexes at RTA. For four-step implantation and RTA (1000°C, 4x10 s) the boron diffusion profiles are coincident with diffusion profiles at one-step (10 s) implantation. (authors)