Published January 1974
| Version v1
Journal article
Concentration dependence of a charge carrier number in indium arsenide doped with donor- and acceptor-type elements and its relationship with the threshold of solubility
Description
no abstract available
Additional details
Additional titles
- Original title (Russian)
- Концентрационная зависимост' числа носителей заряда при легировании арсенида индия элементами донорного и акцепторного типа и ее взаимосвяз' с пределом растворимости
Publishing Information
- Journal Title
- Fiz. Tekh. Poluprovodn.
- Journal Volume
- 8
- Journal Issue
- 1
- Series
- Fiz. Tekh. Poluprovodn.
- Journal Page Range
- 131-136
INIS
- Country of Publication
- USSR
- Country of Input or Organization
- USSR
- INIS RN
- 5118437
- Subject category
- S75: CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND SUPERFLUIDITY;
- Descriptors DEI
- ARSENIDES; CARRIER DENSITY; CHARGE CARRIERS; CRYSTAL DOPING; CRYSTAL-PHASE TRANSFORMATIONS; ELECTRON DENSITY; INDIUM ALLOYS; MICROHARDNESS; QUANTITY RATIO; SOLUBILITY; TELLURIUM ADDITIONS; ZINC ADDITIONS
- Descriptors DEC
- ALLOYS; ARSENIC COMPOUNDS; HARDNESS; MECHANICAL PROPERTIES; PHASE TRANSFORMATIONS; TELLURIUM ALLOYS; ZINC ALLOYS
Optional Information
- Notes
- For English translation see the journal Sov. Phys.-Semicond.