Published July 1, 2017 | Version v1
Journal article

Magnetoresistance and Shubnikov-de Haas oscillation in YSb

  • 1. Department of Physics, Renmin University of China - Beijing 100872, PRC and Beijing Key Laboratory of Opto-electronic Functional Materials and Micro-nano Devices, Renmin University of China Beijing 100872, PRC (China)

Description

YSb crystals are grown and the transport properties under magnetic field are measured. The resistivity exhibits metallic behavior under zero magnetic field and the low-temperature resistivity shows a clear upturn once a moderate magnetic field is applied. The upturn is greatly enhanced by increasing magnetic field. At low temperature (2.5 K) and high field (14 T), the transverse magnetoresistance (MR) is quite large ( 3.47 × 10 4 % ). In addition, the Shubnikov-de Haas (SdH) oscillation has also been observed in YSb. The possible trivial Berry phase extracted from the SdH oscillation, the band structure revealed by angle-resolved photoemission spectroscopy (ARPES) and first-principles calculations demonstrate that YSb is a topologically trivial material. The extremely large MR (XMR) in YSb may originate from the electron-hole compensation. (letter)

Availability note (English)

Available from http://dx.doi.org/10.1209/0295-5075/119/17002

Additional details

Identifiers

Publishing Information

Journal Title
Europhysics Letters
Journal Volume
119
Journal Issue
1
Journal Page Range
[6 p.]
ISSN
0295-5075
CODEN
EULEEJ

INIS

Country of Publication
France
Country of Input or Organization
International Atomic Energy Agency (IAEA)
INIS RN
51026547
Subject category
S71: CLASSICAL AND QUANTUM MECHANICS, GENERAL PHYSICS;
Descriptors DEI
CRYSTALS; MAGNETIC FIELDS; MAGNETORESISTANCE; PHOTOELECTRON SPECTROSCOPY; TOPOLOGY
Descriptors DEC
ELECTRIC CONDUCTIVITY; ELECTRICAL PROPERTIES; ELECTRON SPECTROSCOPY; MATHEMATICS; PHYSICAL PROPERTIES; SPECTROSCOPY