Magnetoresistance and Shubnikov-de Haas oscillation in YSb
Creators
- 1. Department of Physics, Renmin University of China - Beijing 100872, PRC and Beijing Key Laboratory of Opto-electronic Functional Materials and Micro-nano Devices, Renmin University of China Beijing 100872, PRC (China)
Description
YSb crystals are grown and the transport properties under magnetic field are measured. The resistivity exhibits metallic behavior under zero magnetic field and the low-temperature resistivity shows a clear upturn once a moderate magnetic field is applied. The upturn is greatly enhanced by increasing magnetic field. At low temperature (2.5 K) and high field (14 T), the transverse magnetoresistance (MR) is quite large . In addition, the Shubnikov-de Haas (SdH) oscillation has also been observed in YSb. The possible trivial Berry phase extracted from the SdH oscillation, the band structure revealed by angle-resolved photoemission spectroscopy (ARPES) and first-principles calculations demonstrate that YSb is a topologically trivial material. The extremely large MR (XMR) in YSb may originate from the electron-hole compensation. (letter)
Availability note (English)
Available from http://dx.doi.org/10.1209/0295-5075/119/17002Additional details
Identifiers
Publishing Information
- Journal Title
- Europhysics Letters
- Journal Volume
- 119
- Journal Issue
- 1
- Journal Page Range
- [6 p.]
- ISSN
- 0295-5075
- CODEN
- EULEEJ
INIS
- Country of Publication
- France
- Country of Input or Organization
- International Atomic Energy Agency (IAEA)
- INIS RN
- 51026547
- Subject category
- S71: CLASSICAL AND QUANTUM MECHANICS, GENERAL PHYSICS;
- Descriptors DEI
- CRYSTALS; MAGNETIC FIELDS; MAGNETORESISTANCE; PHOTOELECTRON SPECTROSCOPY; TOPOLOGY
- Descriptors DEC
- ELECTRIC CONDUCTIVITY; ELECTRICAL PROPERTIES; ELECTRON SPECTROSCOPY; MATHEMATICS; PHYSICAL PROPERTIES; SPECTROSCOPY