Growth and intermixing of Nb on Fe(110) and Fe on Nb(110)
Creators
- 1. Institut fuer Experimentalphysik/Oberflaechenphysik, Ruhr-Universitaet Bochum, 44780 Bochum (Germany)
Description
The growth system Nb/Fe and the reversed system Fe/Nb were studied on the (110) surface using Scanning Tunneling Microscopy (STM). For Nb/Fe(110) we present in situ STM results as a direct evidence of a Nb/Fe exchange mechanism at temperatures above 400 K that leads to the formation of a surface alloy. Since the experiments on Nb(110) were done on Nb buffer layers the fabrication of those is discussed. We show that besides Al2O3 (112-bar0) wafers a W(110) single crystal can serve as a support for Nb(110) buffer layers which is more convenient for STM measurements. The niobium oxide adlayer that is present on nearly all Nb surfaces can be avoided by thorough degassing of the Nb source. Results on Fe/Nb(110) are discussed in the temperature range from room temperature (RT) to 1000 K. At RT no intermixing of Fe and Nb was observed and with very low deposition rates epitaxial films can be grown. An ordered dislocation network was observed in the first Fe layers. Above 800 K two adatom island species are present as the manifestation of an alloying process. The formation of an Fe-Nb surface alloy which in the submonolayer regime is interspersed with chains of pure Fe is suggested
Additional details
Identifiers
- DOI
- 10.1016/j.tsf.2005.11.039;
- PII
- S0040-6090(05)02248-0;
Publishing Information
- Journal Title
- Thin Solid Films
- Journal Volume
- 500
- Journal Issue
- 1-2
- Journal Page Range
- p. 347-355
- ISSN
- 0040-6090
- CODEN
- THSFAP
INIS
- Country of Publication
- Netherlands
- Country of Input or Organization
- International Atomic Energy Agency (IAEA)
- INIS RN
- 37115104
- Subject category
- S36: MATERIALS SCIENCE;
- Descriptors DEI
- ALUMINIUM OXIDES; DEPOSITION; DISLOCATIONS; EPITAXY; FABRICATION; FILMS; IRON; IRON ALLOYS; LAYERS; MONOCRYSTALS; NIOBIUM; NIOBIUM ALLOYS; NIOBIUM OXIDES; SCANNING TUNNELING MICROSCOPY; SURFACES; TEMPERATURE RANGE 0273-0400 K; TEMPERATURE RANGE 0400-1000 K
- Descriptors DEC
- ALLOYS; ALUMINIUM COMPOUNDS; CHALCOGENIDES; CRYSTAL DEFECTS; CRYSTAL GROWTH METHODS; CRYSTAL STRUCTURE; CRYSTALS; ELEMENTS; LINE DEFECTS; METALS; MICROSCOPY; NIOBIUM COMPOUNDS; OXIDES; OXYGEN COMPOUNDS; REFRACTORY METAL COMPOUNDS; REFRACTORY METALS; TEMPERATURE RANGE; TRANSITION ELEMENT ALLOYS; TRANSITION ELEMENT COMPOUNDS; TRANSITION ELEMENTS
Optional Information
- Copyright
- Copyright (c) 2005 Elsevier Science B.V., Amsterdam, The Netherlands, All rights reserved.