Published October 2013 | Version v1
Journal article Metadata-only

A donor-like trap at the InGaN/GaN interface with net negative polarization and its possible consequence on internal quantum efficiency

Creators

  • 1. Electrical and Computer Engineering Department, University of California, Santa Barbara, CA (United States)
  • 2. Materials Department, University of California, Santa Barbara, CA (United States)

Description

Deep-level transient spectroscopy was performed on InGaN HEMTs and revealed a donor-like trap at the InGaN/GaN interface with net negative polarization. The trap was found to have an energy level of 0.071 eV. A photo-assisted capacitance–voltage (CV) measurement was performed on an InGaN diode. CV curves were measured before and after exposure to a broadband ultraviolet (UV) lamp. The UV lamp caused capacitance to increase as a result of traps being ionized. The trap density was found to be at least 4 × 1011 cm−2. (paper)

Availability note (English)

Available from http://dx.doi.org/10.1088/0268-1242/28/10/105021

Additional details

Identifiers

DOI
10.1088/0268-1242/28/10/105021;

Publishing Information

Journal Title
Semiconductor Science and Technology
Journal Volume
28
Journal Issue
10
Journal Page Range
[7 p.]
ISSN
0268-1242
CODEN
SSTEET

INIS

Country of Publication
United Kingdom
Country of Input or Organization
International Atomic Energy Agency (IAEA)
INIS RN
45013888
Subject category
S75: CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND SUPERFLUIDITY;
Descriptors DEI
DEEP LEVEL TRANSIENT SPECTROSCOPY; DENSITY; ENERGY LEVELS; GALLIUM NITRIDES; POLARIZATION; QUANTUM EFFICIENCY
Descriptors DEC
EFFICIENCY; GALLIUM COMPOUNDS; NITRIDES; NITROGEN COMPOUNDS; PHYSICAL PROPERTIES; PNICTIDES; SPECTROSCOPY