Published 1989
| Version v1
Miscellaneous
Impurity microprecipitates in silicon
Description
Volumetric microinhomogeneities of various type in production silicon crystals, grown by Czochralski and creecible-free zone melting methods, are detected using scattering of very cold neutrons, laser mass-spectrometry, secondary ion mass spectroscopy
Additional details
Additional titles
- Original title (Russian)
- Примесные микропреципитаты в кремнии
Publishing Information
- Imprint Title
- Plasma physics
- Imprint Pagination
- 56 p.
- Journal Issue
- no.11
- Series
- Kratkie soobshcheniya po fizike.
- Journal Page Range
- p. 6-8.
- Report number
- INIS-SU--238/A
INIS
- Country of Publication
- USSR
- Country of Input or Organization
- USSR
- INIS RN
- 22030993
- Subject category
- S36: MATERIALS SCIENCE;
- Descriptors DEI
- BORON ADDITIONS; CRYSTAL DEFECTS; CZOCHRALSKI METHOD; IMPURITIES; MASS SPECTROSCOPY; MICROSTRUCTURE; MONOCRYSTALS; NEUTRON DIFFRACTION; P-TYPE CONDUCTORS; SILICON; SOLID CLUSTERS; STRUCTURE FACTORS; ULTRACOLD NEUTRONS; ZONE MELTING
- Descriptors DEC
- BARYONS; COHERENT SCATTERING; COLD NEUTRONS; CRYSTAL STRUCTURE; CRYSTALS; DIFFRACTION; ELEMENTARY PARTICLES; ELEMENTS; FERMIONS; HADRONS; MATERIALS; MELTING; NEUTRONS; NUCLEONS; PHASE TRANSFORMATIONS; SCATTERING; SEMICONDUCTOR MATERIALS; SEMIMETALS; SPECTROSCOPY
Optional Information
- Notes
- Imprint:Fizika plazmy.;Sbornik.