Published January 2006 | Version v1
Report Restricted

Highly-sensitive contaminant analysis of semiconductor surface using pulsed cluster ion beams

Creators

  • 1. National Inst. of Advanced Industrial Science and Technology, Tsukuba, Ibaraki (Japan)
  • 2. Japan Atomic Energy Research Inst., Takasaki Radiation Chemistry Research Establishment, Takasaki, Gunma (Japan)

Description

no abstract available

Files

Restricted

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Part of:
TIARA annual report 2004

Additional details

Publishing Information

Imprint Title
TIARA annual report 2004
Imprint Pagination
427 p.
Journal Page Range
p. 189-191
Report number
JAEA-Review--2005-001

INIS

Country of Publication
Japan
Country of Input or Organization
Japan
INIS RN
37081826
Subject category
S36: MATERIALS SCIENCE;
Resource subtype / Literary indicator
No Abstract
Descriptors DEI
CLUSTER BEAMS; HYDROCARBONS; HYDROGEN; ION BEAMS; ION EMISSION; ION PAIRS; POLLUTION; SEMICONDUCTOR MATERIALS; SURFACES; TIME-OF-FLIGHT MASS SPECTROMETERS
Descriptors DEC
BEAMS; DYNAMIC MASS SPECTROMETERS; ELEMENTS; EMISSION; MASS SPECTROMETERS; MATERIALS; MEASURING INSTRUMENTS; NONMETALS; ORGANIC COMPOUNDS; SPECTROMETERS; TIME-OF-FLIGHT SPECTROMETERS

Optional Information

Notes
7 refs., 3 figs.