Published May 16, 1978
| Version v1
Journal article
Amorphisation and recrystallisation of InSb ion implanted layers
- 1. AN SSSR, Novosibirsk. Inst. Fiziki Poluprovodnikov
Description
The structure of InSb layers implanted with 60 keV Ar+ ions and 300 keV He+ ions was studied as a function of implantation and annealing conditions. Two factors were assumed to govern the specific behaviour of InSb with respect to amorphisation and recrystallization: 1) heavy atomic masses of the components and 2) low melting temperature of the compound
Additional details
Publishing Information
- Journal Title
- Phys. Status Solidi A
- Journal Volume
- 47
- Journal Issue
- 1
- Series
- Phys. Status Solidi A.
- Journal Page Range
- K5-K8
- ISSN
- 0031-8965
INIS
- Country of Publication
- Germany
- Country of Input or Organization
- German Democratic Republic
- INIS RN
- 10421982
- Subject category
- S75: CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND SUPERFLUIDITY;
- Descriptors DEI
- AMORPHOUS STATE; ANNEALING; ANTIMONIDES; ARGON 40 BEAMS; HELIUM 4 BEAMS; INDIUM COMPOUNDS; ION IMPLANTATION; KEV RANGE 10-100; KEV RANGE 100-1000; LAYERS; MONOCRYSTALS; RECRYSTALLIZATION; TEMPERATURE DEPENDENCE
- Descriptors DEC
- ANTIMONY COMPOUNDS; BEAMS; CRYSTALS; ENERGY RANGE; HEAT TREATMENTS; ION BEAMS; KEV RANGE
Optional Information
- Notes
- Short note.