A-C:H films deposition by sputtering/CVD method

Hydrogenated amorphous carbon (a-C:H) films have been prepared by a combined magnetron sputtering-CVD deposition method in argon/methane atmosphere. The most critical process parameter determining the film properties is the ion bombardment occurring during deposition. In the presented deposition method the ion bombardment during deposition can be studied and controlled over a wide range. The effect of the deposition parameters (gas pressure, discharge power, applied bias voltage) on the deposition rate were investigated. The reactive radicals generated in the plasma were identified and monitored by optical emission spectrometry (Author)