Energy transfer mechanism and Auger effect in Er3+ coupled silicon nanoparticle samples
Creators
- 1. NEST, Scuola Normale Superiore, Istituto di nanoscienze-CNR, Piazza San Silvestro 12, 56127 Pisa (Italy)
- 2. Department of Physics, Nanoscience Laboratory, University of Trento, via Sommarive 14, Trento 38100 (Italy)
- 3. Dept. Electronica, MIND-IN2UB, Universitat de Barcelona, Marti i Franques 1, 08028 Barcelona, CAT (Spain)
- 4. CIMAP, UMR CEA/CNRS/ENSICAEN/Univ. CAEN, No. 6252 ENSICAEN, 6 Boulevard Marechal Juin, 14050 Caen Cedex 4 (France)
Description
We report a spectroscopic study about the energy transfer mechanism among silicon nanoparticles (Si-np), both amorphous and crystalline, and Er ions in a silicon dioxide matrix. From infrared spectroscopic analysis, we have determined that the physics of the transfer mechanism does not depend on the Si-np nature, finding a fast (<200 ns) energy transfer in both cases, while the amorphous nanoclusters reveal a larger transfer efficiency than the nanocrystals. Moreover, the detailed spectroscopic results in the visible range here reported are essential to understand the physics behind the sensitization effect, whose knowledge assumes a crucial role to enhance the transfer rate and possibly employing the material in optical amplifier devices. Joining the experimental data, performed with pulsed and continuous-wave excitation, we develop a model in which the internal intraband recombination within Si-np is competitive with the transfer process via an Auger electron-''recycling'' effect. Posing a different light on some detrimental mechanism such as Auger processes, our findings clearly recast the role of Si-np in the sensitization scheme, where they are able to excite very efficiently ions in close proximity to their surface.
Additional details
Identifiers
- DOI
- 10.1063/1.3476286;
Publishing Information
- Journal Title
- Journal of Applied Physics
- Journal Volume
- 108
- Journal Issue
- 5
- Journal Page Range
- p. 053518-053518.8
- ISSN
- 0021-8979
- CODEN
- JAPIAU
INIS
- Country of Publication
- United States
- Country of Input or Organization
- International Atomic Energy Agency (IAEA)
- INIS RN
- 42069890
- Subject category
- S77: NANOSCIENCE AND NANOTECHNOLOGY; S75: CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND SUPERFLUIDITY;
- Descriptors DEI
- AUGER EFFECT; AUGER ELECTRON SPECTROSCOPY; ELECTRONS; ENERGY TRANSFER; ERBIUM; ERBIUM IONS; EXCITATION; INFRARED SPECTRA; NANOSTRUCTURES; PARTICLES; PHOTOLUMINESCENCE; SEMICONDUCTOR MATERIALS; SILICON; SILICON OXIDES; SURFACES; VISIBLE RADIATION
- Descriptors DEC
- CHALCOGENIDES; CHARGED PARTICLES; ELECTROMAGNETIC RADIATION; ELECTRON SPECTROSCOPY; ELEMENTARY PARTICLES; ELEMENTS; EMISSION; ENERGY-LEVEL TRANSITIONS; FERMIONS; IONS; LEPTONS; LUMINESCENCE; MATERIALS; METALS; OXIDES; OXYGEN COMPOUNDS; PHOTON EMISSION; RADIATIONS; RARE EARTHS; SEMIMETALS; SILICON COMPOUNDS; SPECTRA; SPECTROSCOPY
Optional Information
- Notes
- (c) 2010 American Institute of Physics