Interaction of intrinsic point defects with impurity phosphorus atoms in n-type silicon under electron (pulsed) irradiation

The effect of n-type silicon electron pulsed radiation intensity with phosphorus impurity on the rate of complexing (A-centres or E-centres) was investigated. Irradiation was conducted by 900 keV fast neutrons. Variation of phosphorus free atom concentration in site of crystal lattice and variation of total concentration of compensating acceptors were traced under radiation. Investigation of thermal stability of radiation-induced defects (100-420 deg C) was conducted. The obtained data confirm the fact that rather stable electric inactive defects formed as a result of phosphorus impurity atom interaction with proper point defects of the crystal lattice may exist in n-Si