Published 1989 | Version v1
Journal article

Off-axis motions and distortions in acceptor-H complexes from uniaxial stress studies

  • 1. Lund Univ. (Sweden)
  • 2. Bell Labs., Murray Hill, NJ (USA)

Description

The stretching vibrations of H in the B-H and Al-H complexes in Si have been studied under uniaxial stress. For B-H we show that H can move between different <111> axes at elevated temperatures. For Al-H we observe stress induced sidebands that are related to the low frequency excitations that were thermally populated in a previous study of the temperature dependence of the spectrum. (author) 14 refs., 6 figs

Additional details

Publishing Information

Journal Title
Materials Science Forum
Journal Volume
38-41
Series
Mater. Sci. Forum.
Journal Page Range
1015-1019
ISSN
0255-5476
CODEN
MSFOE

Conference

Title
15. International conference on defects in semiconductors (ICDS-15).
Dates
22-26 Aug 1988.
Place
Budapest (Hungary).

INIS

Country of Publication
Switzerland
Country of Input or Organization
Switzerland
INIS RN
20062181
Subject category
S75: CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND SUPERFLUIDITY;
Resource subtype / Literary indicator
Conference
Descriptors DEI
ALUMINIUM; BORON; EXCITATION; HYDROGEN; IMPURITIES; LATTICE VIBRATIONS; SILICON; SPECTROSCOPY; STRESSES
Descriptors DEC
ELEMENTS; ENERGY-LEVEL TRANSITIONS; METALS; NONMETALS; SEMIMETALS