Published 1989
| Version v1
Journal article
Off-axis motions and distortions in acceptor-H complexes from uniaxial stress studies
- 1. Lund Univ. (Sweden)
- 2. Bell Labs., Murray Hill, NJ (USA)
Description
The stretching vibrations of H in the B-H and Al-H complexes in Si have been studied under uniaxial stress. For B-H we show that H can move between different <111> axes at elevated temperatures. For Al-H we observe stress induced sidebands that are related to the low frequency excitations that were thermally populated in a previous study of the temperature dependence of the spectrum. (author) 14 refs., 6 figs
Additional details
Publishing Information
- Journal Title
- Materials Science Forum
- Journal Volume
- 38-41
- Series
- Mater. Sci. Forum.
- Journal Page Range
- 1015-1019
- ISSN
- 0255-5476
- CODEN
- MSFOE
Conference
- Title
- 15. International conference on defects in semiconductors (ICDS-15).
- Dates
- 22-26 Aug 1988.
- Place
- Budapest (Hungary).
INIS
- Country of Publication
- Switzerland
- Country of Input or Organization
- Switzerland
- INIS RN
- 20062181
- Subject category
- S75: CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND SUPERFLUIDITY;
- Resource subtype / Literary indicator
- Conference
- Descriptors DEI
- ALUMINIUM; BORON; EXCITATION; HYDROGEN; IMPURITIES; LATTICE VIBRATIONS; SILICON; SPECTROSCOPY; STRESSES
- Descriptors DEC
- ELEMENTS; ENERGY-LEVEL TRANSITIONS; METALS; NONMETALS; SEMIMETALS