Correlation between channeling parameters and nitrogen doping concentration in n-type SiC polytype crystals studied by CW- and pulsed-EPR

Several SiC polytype crystals (namely 4H, 6H, 15R, 21R) were measured by means of pulsed-EPR and conventional CW-EPR spectroscopy. The experimental spectra were taken and analyzed. Computer simulations proved the existence of a strong signal originating from the high nitrogen dopant concentration. The results obtained are correlated with values existing in literature, concerning the two crucial channeling parameters, λ, the mean channeling distance and, α, the ratio of the stopping powers in the aligned and random mode for the same polytype structures. An attempt is also made to extend the study to other crystals and crystallographic structures