Published September 1, 2006
| Version v1
Journal article
Synthesis and characterization of ZnO nanostructures grown on Si substrates
- 1. Jilin Normal University, SiPing, Jilin 136000 (China)
- 2. Physical Electronics and Photonics, Department of Physics, Goeteborg University, S-412 96 Goeteborg (Sweden)
- 3. Department of Physics and Measurement Technology, Linkoeping University, S-583 81, Linkoeping (Sweden)
Description
ZnO nanostructures were grown by thermal evaporation technique on (001) Si substrate and were characterized by photoluminescence measurements, scanning electron microscope and x-ray measurements. The results show that the formation of ZnO nanostructures is strongly influenced by the growth conditions. By optimizing the growth conditions, orientated ZnO nanorods with a diameter of around 300 nm and lengths of 20-35 μm have been achieved, and they show excellent optical properties. The laser action is observed at room temperature by using optical pumping
Availability note (English)
Available online at http://stacks.iop.org/1402-4896/T126/131/physscr6_T126_S29.pdf or at the Web site for the journal Physica Scripta (Online) (ISSN 1402-4896) http://www.iop.org/Additional details
Identifiers
- URL
- http://stacks.iop.org/1402-4896/T126/131/physscr6_T126_S29.pdf; http://www.iop.org/;
- DOI
- 10.1088/0031-8949/2006/T126/029;
- PII
- S0031-8949(06)27322-29;
Publishing Information
- Journal Title
- Physica Scripta (Online)
- Journal Volume
- 2006
- Journal Issue
- T126
- Journal Page Range
- p. 131-134
- ISSN
- 1402-4896
Conference
- Title
- 21. Nordic semiconductor meeting
- Dates
- 18-19 Aug 2005
- Place
- Sundvolden (Norway)
INIS
- Country of Publication
- United Kingdom
- Country of Input or Organization
- International Atomic Energy Agency (IAEA)
- INIS RN
- 38003683
- Subject category
- S36: MATERIALS SCIENCE;
- Resource subtype / Literary indicator
- Conference
- Descriptors DEI
- CRYSTAL GROWTH; EVAPORATION; LASERS; NANOSTRUCTURES; OPTICAL PROPERTIES; OPTICAL PUMPING; PHOTOLUMINESCENCE; SCANNING ELECTRON MICROSCOPY; SILICON; SUBSTRATES; SYNTHESIS; TEMPERATURE RANGE 0273-0400 K; ZINC OXIDES
- Descriptors DEC
- CHALCOGENIDES; ELECTRON MICROSCOPY; ELEMENTS; EMISSION; LUMINESCENCE; MICROSCOPY; OXIDES; OXYGEN COMPOUNDS; PHASE TRANSFORMATIONS; PHOTON EMISSION; PHYSICAL PROPERTIES; PUMPING; SEMIMETALS; TEMPERATURE RANGE; ZINC COMPOUNDS