Published August 2011
| Version v1
Journal article
High dimensional addressable LED arrays based on type I GaInAsSb quantum wells with quinternary AlGaInAsSb barriers
- 1. State University of New York at Stony Brook, Stony Brook, NY 11794 (United States)
- 2. Power Photonic Corporation, Stony Brook, NY 11790 (United States)
- 3. Air Force Research Laboratory, Eglin Air Force Base, FL 32542 (United States)
Description
GaSb-based type I InGaAsSb quantum well mid-infrared (mid-IR) light-emitting diodes (LEDs) operated at wavelengths up to 3.66 µm are demonstrated. The application of quinternary AlGaInAsSb barriers improved hole confinement in the quantum wells and enabled an LED radiant excitance of 1.3 W cm−2 (λ = 3.66 µm) at 100 K which corresponds to the emittance of a blackbody at 1350 K. High-contrast individually addressed 512 × 512 LED arrays were designed and fabricated using wet etching. An accurate characterization technique for mid-IR LEDs has been developed
Availability note (English)
Available from http://dx.doi.org/10.1088/0268-1242/26/8/085022Additional details
Identifiers
- DOI
- 10.1088/0268-1242/26/8/085022;
- PII
- S0268-1242(11)88306-9;
Publishing Information
- Journal Title
- Semiconductor Science and Technology
- Journal Volume
- 26
- Journal Issue
- 8
- Journal Page Range
- [6 p.]
- ISSN
- 0268-1242
- CODEN
- SSTEET
INIS
- Country of Publication
- United Kingdom
- Country of Input or Organization
- International Atomic Energy Agency (IAEA)
- INIS RN
- 45013744
- Subject category
- S75: CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND SUPERFLUIDITY; S77: NANOSCIENCE AND NANOTECHNOLOGY;
- Descriptors DEI
- ACCURACY; ARSENIC COMPOUNDS; GALLIUM ANTIMONIDES; INDIUM COMPOUNDS; LIGHT EMITTING DIODES; QUANTUM WELLS; WAVELENGTHS
- Descriptors DEC
- ANTIMONIDES; ANTIMONY COMPOUNDS; GALLIUM COMPOUNDS; NANOSTRUCTURES; PNICTIDES; SEMICONDUCTOR DEVICES; SEMICONDUCTOR DIODES