Radiation-induced diffusion at ionic etching

Effect of radiation-induced diffusion (RID) on profiles of cesium implanted into tantalum, tungsten and molybdenum with 100 keV energy was studied. Layer-by-layer analysis was performed by means of 4 keV argon ions and 100 μA/cm2 beam density. For the case under investigation an integral equation, which solution permitted to determine impurity true distribution, has been derived. It is shown that RID taking place on ionic etching results in broadening and shifting cesium profiles peaks into the deep of a specimen and so perverts results of the layer-by-layer analysis