Effect of Schottky barrier on the transport property in perovskite oxide heterostructures

The transport processes in the heterostructures of La0.7Sr0.3MnO3/BiFeO3 and La0.9Sr0.1MnO3/SrNb0.01Ti0.99O3 have been studied theoretically by taking into account the effect of Schottky barrier formed at the contact of the electrode. By comparing with the experimental data, it is found that the physical origin for the symmetry of the measured I-V curves in the heterostructures of La0.7Sr0.3MnO3/BiFeO3 can be attributed to the effect of the Schottky contact diodes. It is also found that the influence of Schottky barrier on the transport properties of La0.9Sr0.1MnO3/SrNb0.01Ti0.99O3 heterostructures increases with the increased temperature and decreases with the increased doping density of SrNb0.01Ti0.99O3 layer at temperature above the Curie temperature of La0.9Sr0.1MnO3 based on our calculation.