Published April 2009 | Version v1
Journal article Metadata-only

Growth and electrical properties of high-quality Mg-doped p-type Al0.2Ga0.8N films

Creators

  • 1. Key Laboratory for Wide Band-Gap Semiconductor Materials and Devices of the Ministry of Education, School of Microelectronics, Xidian University, Xi'an 710071 (China)

Description

The growth of high-performance Mg-doped p-type AlxGa1-xN (x = 0.2) using metal-organic chemical vapor deposition is reported. The influence of growth conditions (growth temperature, magnesium flow, and thermal annealing temperature) on the electrical properties of Mg-doped p-type AlxGa1-xN (x = 0.2) has been investigated. Using the optimized conditions, we obtained a minimum p-type resistivity of 0.71 Ω·cm for p-type AlGaN with 20% Al fraction.

Availability note (English)

Available from http://dx.doi.org/10.1088/1674-4926/30/4/043002

Additional details

Identifiers

DOI
10.1088/1674-4926/30/4/043002;

Publishing Information

Journal Title
Journal of Semiconductors
Journal Volume
30
Journal Issue
4
Journal Page Range
[4 p.]
ISSN
1674-4926

INIS

Country of Publication
United Kingdom
Country of Input or Organization
International Atomic Energy Agency (IAEA)
INIS RN
41079196
Subject category
S36: MATERIALS SCIENCE;
Descriptors DEI
ALUMINIUM COMPOUNDS; ANNEALING; CHEMICAL VAPOR DEPOSITION; DOPED MATERIALS; ELECTRICAL PROPERTIES; FILMS; GALLIUM NITRIDES; MAGNESIUM; ORGANOMETALLIC COMPOUNDS
Descriptors DEC
ALKALINE EARTH METALS; CHEMICAL COATING; DEPOSITION; ELEMENTS; GALLIUM COMPOUNDS; HEAT TREATMENTS; MATERIALS; METALS; NITRIDES; NITROGEN COMPOUNDS; ORGANIC COMPOUNDS; PHYSICAL PROPERTIES; PNICTIDES; SURFACE COATING