In-situ HVEM study of the influence of localised strain, interfaces, and extrinsic point defects on {113}-defect generation in silicon

Results are presented of an in-situ study of 1 MeV electron irradiation induced {113}-defect generation in silicon containing different types and concentration profiles of extrinsic point defects and/or locally strained areas. It is shown that most of the observations can be explained semi-quantitatively on the basis of known point defect reactions. The results suggest that in-situ electron irradiation might be a powerful tool to study local sinks for point defects in integrated circuit structures. (orig.)