Published January 2007 | Version v1
Journal article

Optical properties of Bi3+ ions doped in NaYF4

  • 1. Division of Electronics and Applied Physics, Graduate School of Engineering, Osaka Electro-Communication University, Htsucho 18-8, Neyagawa 572-8530 (Japan)
  • 2. Academic Frontier Promotion Center, Osaka Electro-Communication University, Neyagawa, Osaka 572-8530 (Japan)
  • 3. Graduate School of Science, Osaka Prefecture University, Sakai, Osaka 590-0035 (Japan)
  • 4. Division of Electronics and Applied Physics, Graduate School of Engineering, Osaka Electro-Communication University, Htsucho 18-8, Neyagawa 572-8530 (Japan) and Academic Frontier Promotion Center, Osaka Electro-Communication University, Neyagawa, Osaka 572-8530 (Japan)

Description

Photoluminescence and photoexcitation spectra of Bi3+ ions doped in NaYF4 crystals have been examined in UV and VUV regions. A broad luminescence band has been observed at 2.82 eV under photoexcitation of UV and VUV light. The photoexcitation spectrum of this luminescence exhibits several structures at 4.0-5.2 eV and 5.6-7.3 eV. These excitation bands are due to intra-ionic transitions in Bi3+ ions, probably corresponding to so-called A band (1S0→3P1 transitions) and C band (1S0→1P1 transitions), respectively. The optical process and the relaxed excited states of Bi3+ ions are discussed on the basis of s2→sp electronic transition in Bi3+ ion whose site has a low symmetry in NaYF4 host lattices

Additional details

Identifiers

DOI
10.1016/j.jlumin.2006.01.136;
PII
S0022-2313(06)00139-6;

Publishing Information

Journal Title
Journal of Luminescence
Journal Volume
122-123
Journal Page Range
p. 149-151
ISSN
0022-2313
CODEN
JLUMA8

Conference

Title
2005 international conference on luminescence and optical spectroscopy of condensed matter
Acronym
ICL'05
Dates
25-29 Jul 2005
Place
Beijing (China)

Optional Information

Copyright
Copyright (c) 2006 Elsevier Science B.V., Amsterdam, The Netherlands, All rights reserved.