Published January 2007
| Version v1
Journal article
Optical properties of Bi3+ ions doped in NaYF4
- 1. Division of Electronics and Applied Physics, Graduate School of Engineering, Osaka Electro-Communication University, Htsucho 18-8, Neyagawa 572-8530 (Japan)
- 2. Academic Frontier Promotion Center, Osaka Electro-Communication University, Neyagawa, Osaka 572-8530 (Japan)
- 3. Graduate School of Science, Osaka Prefecture University, Sakai, Osaka 590-0035 (Japan)
- 4. Division of Electronics and Applied Physics, Graduate School of Engineering, Osaka Electro-Communication University, Htsucho 18-8, Neyagawa 572-8530 (Japan) and Academic Frontier Promotion Center, Osaka Electro-Communication University, Neyagawa, Osaka 572-8530 (Japan)
Description
Photoluminescence and photoexcitation spectra of Bi3+ ions doped in NaYF4 crystals have been examined in UV and VUV regions. A broad luminescence band has been observed at 2.82 eV under photoexcitation of UV and VUV light. The photoexcitation spectrum of this luminescence exhibits several structures at 4.0-5.2 eV and 5.6-7.3 eV. These excitation bands are due to intra-ionic transitions in Bi3+ ions, probably corresponding to so-called A band (1S0→3P1 transitions) and C band (1S0→1P1 transitions), respectively. The optical process and the relaxed excited states of Bi3+ ions are discussed on the basis of s2→sp electronic transition in Bi3+ ion whose site has a low symmetry in NaYF4 host lattices
Additional details
Identifiers
- DOI
- 10.1016/j.jlumin.2006.01.136;
- PII
- S0022-2313(06)00139-6;
Publishing Information
- Journal Title
- Journal of Luminescence
- Journal Volume
- 122-123
- Journal Page Range
- p. 149-151
- ISSN
- 0022-2313
- CODEN
- JLUMA8
Conference
- Title
- 2005 international conference on luminescence and optical spectroscopy of condensed matter
- Acronym
- ICL'05
- Dates
- 25-29 Jul 2005
- Place
- Beijing (China)
INIS
- Country of Publication
- Netherlands
- Country of Input or Organization
- International Atomic Energy Agency (IAEA)
- INIS RN
- 38034804
- Subject category
- S36: MATERIALS SCIENCE;
- Resource subtype / Literary indicator
- Conference
- Descriptors DEI
- BISMUTH IONS; CRYSTALS; DOPED MATERIALS; EV RANGE 01-10; EXCITATION; EXCITED STATES; FAR ULTRAVIOLET RADIATION; FLUORIDES; OPTICAL PROPERTIES; PHOSPHORS; PHOTOLUMINESCENCE
- Descriptors DEC
- CHARGED PARTICLES; ELECTROMAGNETIC RADIATION; EMISSION; ENERGY LEVELS; ENERGY RANGE; ENERGY-LEVEL TRANSITIONS; EV RANGE; FLUORINE COMPOUNDS; HALIDES; HALOGEN COMPOUNDS; IONS; LUMINESCENCE; MATERIALS; PHOTON EMISSION; PHYSICAL PROPERTIES; RADIATIONS; ULTRAVIOLET RADIATION
Optional Information
- Copyright
- Copyright (c) 2006 Elsevier Science B.V., Amsterdam, The Netherlands, All rights reserved.