Preparation and transport properties of Nb1-xCrxN epitaxial thin films on silicon wafers

Nb1-xCrxN eptiaxial thin films were deposited on Si(0 0 1) and Si(1 1 1) substrates by molecular beam epitaxy of niobium nitride on a CrN buffer layer, followed by annealing at 973 K under nitrogen radical irradiation. X-ray photoelectron spectroscopy and X-ray diffraction measurements showed that on annealing the CrN buffer layer diffused into the niobium nitride layer to form Nb1-xCrxN films. The films showed superconductivity below 5-8 K. The temperature dependence of the resistivities above the transition temperatures were semiconductor-like, and varied on the orientation of the films