Published April 1988
| Version v1
Journal article
Influence of the rate of irradiation with fast neutrons on the defect formation processes in silicon
- 1. Institute of Semiconductor Physics, Novosibirsk (USSR)
Description
An experimental investigation was made of the rate of formation of the main radiation defects (A centers, E centers, divacancies) in n-type silicon on the rate of irradiation with fast reactor neutrons. The rate of formation of defects decreased in a certain range of radiation rates. Outside this range (at low and high irradiation rates) the rate of formation of defects was constant
Additional details
Publishing Information
- Journal Title
- Soviet Physics - Semiconductors (English Translation)
- Journal Volume
- 22
- Journal Issue
- 4
- Series
- Sov. Phys. - Semicond. (Engl. Transl.).
- Journal Page Range
- 430-432
- ISSN
- 0038-5700
- CODEN
- SPSEA
INIS
- Country of Publication
- United States
- Country of Input or Organization
- United States
- INIS RN
- 21070775
- Subject category
- S36: MATERIALS SCIENCE;
- Resource subtype / Literary indicator
- Translation
- Descriptors DEI
- DATA PROCESSING; DEFECTS; MEASURING INSTRUMENTS; MEASURING METHODS; NEUTRONS; PHYSICAL RADIATION EFFECTS; SEMICONDUCTOR MATERIALS; SILICON; USSR
- Descriptors DEC
- BARYONS; DEVELOPED COUNTRIES; ELEMENTARY PARTICLES; ELEMENTS; EUROPE; FERMIONS; HADRONS; MATERIALS; NUCLEONS; RADIATION EFFECTS; SEMIMETALS
Optional Information
- Notes
- Cover-to-cover translation of Fizika i Tekhnika Poluprovodnikov (US SR).