Synthesis and characterization of ZnO nanowires for nanosensor applications
Creators
- 1. Department of Microelectronics and Semiconductor Devices, Technical University of Moldova, 168 Stefan cel Mare Blvd., MD-2004 Chisinau, Republic of Moldova (Moldova, Republic of)
- 2. Department of Physics, University of Central Florida, Orlando, FL 32816-2385 (United States)
- 3. Institute of Solid State Physics, Russian Academy of Science, 142432 Chernogolovka, Moscow District (Russian Federation)
- 4. National Center for Materials Study and Testing, Technical University of Moldova, Chisinau 2004, Republic of Moldova (Moldova, Republic of)
- 5. Institute of Applied Physics of the Academy of Sciences of Moldova, MD-2028 Chisinau, Republic of Moldova (Moldova, Republic of)
- 6. Institute of Microelectronics Technology and High Purity Materials, Russian Academy of Sciences, 142432 Chernogolovka, Moscow District (Russian Federation)
- 7. Institute of Electronic Engineering and Nanotechnologies, Academy of Sciences of Moldova, MD-2028 Chisinau, Republic of Moldova (Moldova, Republic of)
- 8. Advanced Materials Processing and Analysis Center, and Department of Mechanical, Materials, and Aerospace Engineering, University of Central Florida, Orlando, FL 32816 (United States)
Description
In this paper we report the synthesis of ZnO nanowires via chemical vapor deposition (CVD) at 650 oC. It will be shown that these nanowires are suitable for sensing applications. ZnO nanowires were grown with diameters ranging from 50 to 200 nm depending on the substrate position in a CVD synthesis reactor and the growth regimes. X-ray diffraction (XRD), scanning electron microscopy (SEM), transmission electron microscopy (TEM), X-ray photoelectron spectroscopy (XPS), photoluminescence (PL), and Raman spectroscopy (RS) have been used to characterize the ZnO nanowires. To investigate the suitability of the CVD synthesized ZnO nanowires for gas sensing applications, a single ZnO nanowire device (50 nm in diameter) was fabricated using a focused ion beam (FIB). The response to H2 of a gas nanosensor based on an individual ZnO nanowire is also reported.
Availability note (English)
Available from http://dx.doi.org/10.1016/j.materresbull.2010.03.027Additional details
Identifiers
- DOI
- 10.1016/j.materresbull.2010.03.027;
- PII
- S0025-5408(10)00121-2;
Publishing Information
- Journal Title
- Materials Research Bulletin
- Journal Volume
- 45
- Journal Issue
- 8
- Journal Page Range
- p. 1026-1032
- ISSN
- 0025-5408
- CODEN
- MRBUAC
INIS
- Country of Publication
- United States
- Country of Input or Organization
- International Atomic Energy Agency (IAEA)
- INIS RN
- 45028269
- Subject category
- S36: MATERIALS SCIENCE; S77: NANOSCIENCE AND NANOTECHNOLOGY;
- Descriptors DEI
- CHEMICAL VAPOR DEPOSITION; CRYSTAL STRUCTURE; OPTICAL PROPERTIES; PHOTOLUMINESCENCE; QUANTUM WIRES; RAMAN SPECTROSCOPY; SCANNING ELECTRON MICROSCOPY; SEMICONDUCTOR MATERIALS; SUBSTRATES; TRANSMISSION ELECTRON MICROSCOPY; X-RAY DIFFRACTION; X-RAY PHOTOELECTRON SPECTROSCOPY; ZINC OXIDES
- Descriptors DEC
- CHALCOGENIDES; CHEMICAL COATING; COHERENT SCATTERING; DEPOSITION; DIFFRACTION; ELECTRON MICROSCOPY; ELECTRON SPECTROSCOPY; EMISSION; LASER SPECTROSCOPY; LUMINESCENCE; MATERIALS; MICROSCOPY; NANOSTRUCTURES; OXIDES; OXYGEN COMPOUNDS; PHOTOELECTRON SPECTROSCOPY; PHOTON EMISSION; PHYSICAL PROPERTIES; SCATTERING; SPECTROSCOPY; SURFACE COATING; ZINC COMPOUNDS
Optional Information
- Copyright
- Copyright (c) 2010 Elsevier Science B.V., Amsterdam, The Netherlands, All rights reserved.