Published November 1982
| Version v1
Journal article
A simplified method of generating layer sequences for SiC polytypes
Creators
- 1. National Inst. for Researches in Inorganic Materials, Sakura, Ibaraki (Japan)
- 2. Tohoku Univ., Sendai (Japan). Research Inst. for Iron, Steel and Other Metals
Description
New polytypes of silicon carbide, 20Hsub((a)) and 20Hsub((b)), have been synthesized in a very pure graphite crucible reacted with molten silicon at 2000 and 23000C, respectively. A simplified method for generating the layer sequences has been applied to the determination of their crystal structures. The polytypes of 20H((a)) and 20H((b)) are successfully revealed by this method to be (44222222) and (32322323), respectively. (author)
Additional details
Additional titles
- Subtitle (English)
- Pt. 2. Application to the determination of new polytypes 20Hsub((a)) and 20Hsub((b))
Publishing Information
- Journal Title
- J. Mater. Sci.
- Journal Volume
- 17
- Journal Issue
- 11
- Series
- J. Mater. Sci.
- Journal Page Range
- 3197-3203
- ISSN
- 0022-2461
INIS
- Country of Publication
- United Kingdom
- Country of Input or Organization
- United Kingdom
- INIS RN
- 14736601
- Subject category
- S36: MATERIALS SCIENCE;
- Descriptors DEI
- CHEMICAL REACTIONS; CRUCIBLES; CRYSTAL STRUCTURE; GRAPHITE; LAYERS; MATHEMATICAL MODELS; MELTING; SILICON; SILICON CARBIDES; SYNTHESIS; VERY HIGH TEMPERATURE
- Descriptors DEC
- CARBIDES; CARBON; CARBON COMPOUNDS; ELEMENTS; NONMETALS; PHASE TRANSFORMATIONS; SEMIMETALS; SILICON COMPOUNDS