Published September 2018
| Version v1
Journal article
Lowering the Lasing Threshold by Doping in Mid-Infrared Lasers Based on HgCdTe with HgTe Quantum Wells
- 1. Institute for Physics of Microstructures, Russian Academy of Sciences (Russian Federation)
Description
The possibility of significant lowering of the interband lasing threshold in laser structures of the mid-infrared region based on HgCdTe with HgTe quantum wells by doping with donors, which introduce δ layers near quantum wells, is proposed and analyzed. It is shown that at an optimum surface donor concentration in the δ layer of 4 × 1010 cm–2 and an operating temperature of >40 K, the lasing threshold at a wavelength of 20 μm can be lowered more than twofold.
Additional details
Identifiers
Publishing Information
- Journal Title
- Semiconductors
- Journal Volume
- 52
- Journal Issue
- 9
- Journal Page Range
- p. 1221-1224
- ISSN
- 1063-7826
- CODEN
- SMICES
INIS
- Country of Publication
- United States
- Country of Input or Organization
- International Atomic Energy Agency (IAEA)
- INIS RN
- 49100786
- Subject category
- S36: MATERIALS SCIENCE;
- Descriptors DEI
- DOPED MATERIALS; LANTHANUM SELENIDES; LASERS; MERCURY TELLURIDES; POTASSIUM 40; QUANTUM WELLS
- Descriptors DEC
- BETA DECAY RADIOISOTOPES; BETA-MINUS DECAY RADIOISOTOPES; BETA-PLUS DECAY RADIOISOTOPES; CHALCOGENIDES; ELECTRON CAPTURE RADIOISOTOPES; ISOMERIC TRANSITION ISOTOPES; ISOTOPES; LANTHANUM COMPOUNDS; LIGHT NUCLEI; MATERIALS; MERCURY COMPOUNDS; NANOSECONDS LIVING RADIOISOTOPES; NANOSTRUCTURES; NUCLEI; ODD-ODD NUCLEI; POTASSIUM ISOTOPES; RADIOISOTOPES; RARE EARTH COMPOUNDS; SELENIDES; SELENIUM COMPOUNDS; TELLURIDES; TELLURIUM COMPOUNDS; YEARS LIVING RADIOISOTOPES
Optional Information
- Copyright
- Copyright (c) 2018 Pleiades Publishing, Ltd.