Wavelength-resonant, surface-emitting semiconductor laser

The authors designed, fabricated and demonstrated lasing action in a novel vertical surface-emitting laser structure. The MBE-grown structure is a series of 10-nm thick GaAs quantum wells separated by 120-nm thick AlGaAs barriers for a spatially periodic gain medium resonant with the lasing wavelength. Lasing has been achieved by optical pumping with a gain length of only 320 nm