Improved AlGaN–GaN MQW LED performance incorporating InAlN MLB and AlN back barrier: Li-Fi applications
Creators
- 1. Satellite Development Centre, Algerian Space Agency, Oran (Algeria)
- 2. Department of Electronics, Faculty of Technology, University Hassiba Benbouali-Chlef, Ouled Fares (Algeria)
- 3. epartment of Science and Technology, Faculty of Technology, University Hassiba Benbouali-Chlef, Ouled Fares (Algeria)
Description
This research examines Light-Emitting Diodes, or LEDs, in optical communication for Li-Fi (or Light Fidelity) applications. It investigates the fundamentals of Visible Light Communication (or VLC), which offers a practical solution for crowded cities and indoor spaces. This investigation examines the benefits of using an AlGaN Multiple Quantum Well (or MQW) LED on a 4H-SiC substrate. This LED has a compositionally step-graded GaN/InAlN Multi-Layer Barrier (or MLB) and an AlN layer for back barriers. According to the provided data, the device has an energy efficiency of 0.03 W and an anode current of 0.06 A. Additionally, because everyday objects like streetlights, lamps, and wearables often incorporate LEDs, the infrastructure for optical communication using LEDs is already in place, making implementation more accessible and cost-effective. To fully utilize LED-based Li-Fi communication, we need to address some challenges. One of these is the need for a clear line-of-sight between 350 and 480 nm and the impact of ambient light on signal quality. Continued progress in this area will allow Li-Fi to reach its full potential by providing new avenues for development and applications. (author)
Additional details
Identifiers
Publishing Information
- Journal Title
- Indian Journal of Physics (Online)
- Journal Volume
- 99
- Journal Issue
- 2
- Journal Page Range
- p. 651-660
- ISSN
- 0974-9845
INIS
- Country of Publication
- India
- Country of Input or Organization
- India
- INIS RN
- 56008163
- Subject category
- S36: MATERIALS SCIENCE;
- Descriptors DEI
- ALUMINIUM NITRIDES; ENERGY EFFICIENCY; GALLIUM NITRIDES; LIGHT EMITTING DIODES; SILICON CARBIDES
- Descriptors DEC
- ALUMINIUM COMPOUNDS; CARBIDES; CARBON COMPOUNDS; EFFICIENCY; GALLIUM COMPOUNDS; NITRIDES; NITROGEN COMPOUNDS; PNICTIDES; SEMICONDUCTOR DEVICES; SEMICONDUCTOR DIODES; SILICON COMPOUNDS