On-site analysis of modified surface using dual beam system

Recent results obtained using a dual ion beam system at JAERI/Takasaki are reported. In this system, both of ion implantation and ion beam analysis can be made alternatively or simultaneously at low temperatures. In sapphire implanted with 51V+ ions, the amorphization process is analyzed referring to the <0001> aligned spectra taken at different temperatures. The discussion is made on the defect profiles different from the simple accumulation of standard Gaussian form. The depth showing the maximum damage at the initial stage of implantation is quite shallow compared with those reported before. The thermal annealing behaviors of lattice damage and the implanted V atoms are also different between the samples implanted at low and room temperatures. In the former one fine particles of vanadium oxide are formed coherently with the easy recovery in high dose sample but in the latter the mixed oxide alloy is formed. (author)