Thermal neutron dosimetry using MOSFET dosemeters

Metal-Oxide-Semiconductor Field Effect Transistors (MOSFETs) with a LiF powder placed on their surface were used as neutron dosemeter. The effect of thermal neutron irradiation on the threshold voltage of the transistor was studied in order to determine the sensitivity of these detectors. Irradiations were performed at the thermal column of the reactor in IPTA, Demokritos, Athens and at the subcritical reactor of Nuclear Physics Laboratory, Thessaloniki. The sensitivity of the MOSFETs as a function of thermal neutron dose was found to be practically linear up to 100 mSv. The lower detectable dose appears to be depended on the dose rate.