Published May 1999
| Version v1
Journal article
Effect of growth conditions on the crystal structure and composition of cubic silicon carbide layers on silicon single crystal substrates grown form solid-phase sources
- 1. Ulyanovsk State University, ul. L. Tolstogo 42, Ulyanovsk, 432700 (Russian Federation)
Description
The structure and composition of micron-thick 3C-SiC films grown on the surface of silicon single crystals by the method of chemical transport reactions from solid-phase sources have been studied. The X-ray diffraction studies revealed that the films grown at 1360-1380 deg. C inherit the substrate structure. The Auger-electron spectroscopy provided the establishment of the dependence of the stoichiometry of epitaxial and buffer layers on the parameters of their formation
Additional details
Identifiers
Publishing Information
- Journal Title
- Crystallography Reports
- Journal Volume
- 44
- Journal Issue
- 3
- Journal Page Range
- p. 509-512
- ISSN
- 1063-7745
- CODEN
- CYSTE3
INIS
- Country of Publication
- United States
- Country of Input or Organization
- International Atomic Energy Agency (IAEA)
- INIS RN
- 35078413
- Subject category
- S75: CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND SUPERFLUIDITY; S37: INORGANIC, ORGANIC, PHYSICAL AND ANALYTICAL CHEMISTRY;
- Resource subtype / Literary indicator
- Translation
- Descriptors DEI
- AUGER EFFECT; AUGER ELECTRON SPECTROSCOPY; CRYSTAL GROWTH; CRYSTAL STRUCTURE; EPITAXY; FILMS; LAYERS; MONOCRYSTALS; SILICON; SILICON CARBIDES; STOICHIOMETRY; SUBSTRATES; TEMPERATURE RANGE 1000-4000 K; X-RAY DIFFRACTION
- Descriptors DEC
- CARBIDES; CARBON COMPOUNDS; COHERENT SCATTERING; CRYSTAL GROWTH METHODS; CRYSTALS; DIFFRACTION; ELECTRON SPECTROSCOPY; ELEMENTS; SCATTERING; SEMIMETALS; SILICON COMPOUNDS; SPECTROSCOPY; TEMPERATURE RANGE
Optional Information
- Notes
- Translated from Kristallografiya, ISSN 0023-4761, 44, 551-554 (May-June 1999); (c) 1999 MAIK/Interperiodika