Published December 1, 2018 | Version v1
Journal article Metadata-only

Room temperature lasing in injection microdisks with InGaAsN/GaAs quantum well active region

Creators

  • 1. St Petersburg Academic University, 194021 St Petersburg (Russian Federation)
  • 2. Skolkovo Institute of Science and Technology, 143026 Moscow (Russian Federation)
  • 3. Ioffe Institute, 194021 St Petersburg (Russian Federation)
  • 4. Optoelectronics Research Centre, Tampere University of Technology, 33720 Tampere (Finland)

Description

Injection microdisk lasers based on three InGaAsN/GaAs quantum wells with different diameters of the resonator were fabricated and studied. Room temperature lasing at 1.2 μm is demonstrated for the first time. Dependence of the threshold current on the diameter is discussed. (paper)

Availability note (English)

Available from http://dx.doi.org/10.1088/1742-6596/1124/8/081048

Additional details

Identifiers

DOI
10.1088/1742-6596/1124/8/081048;

Publishing Information

Journal Title
Journal of Physics. Conference Series (Online)
Journal Volume
1124
Journal Issue
8
Journal Page Range
[4 p.]
ISSN
1742-6596

Conference

Title
5. International School and Conference on Optoelectronics, Photonics, Engineering and Nanostructures
Acronym
Saint Petersburg OPEN 2018
Dates
2-5 Apr 2018
Place
Saint Petersburg (Russian Federation)

INIS

Country of Publication
United Kingdom
Country of Input or Organization
International Atomic Energy Agency (IAEA)
INIS RN
53021480
Subject category
S71: CLASSICAL AND QUANTUM MECHANICS, GENERAL PHYSICS; S75: CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND SUPERFLUIDITY;
Resource subtype / Literary indicator
Conference
Descriptors DEI
GALLIUM ARSENIDES; LASERS; QUANTUM WELLS; RESONATORS; THRESHOLD CURRENT; TIME DEPENDENCE
Descriptors DEC
ARSENIC COMPOUNDS; ARSENIDES; CURRENTS; ELECTRIC CURRENTS; ELECTRONIC EQUIPMENT; EQUIPMENT; GALLIUM COMPOUNDS; NANOSTRUCTURES; PNICTIDES