Published December 2000 | Version v1
Book

Effect of electron irradiation on properties of CuInSe2 thin films

  • 1. Toyohashi Univ. of Technology, Department of Electrical and Electronic Engineering, Toyohashi, Aichi (Japan)
  • 2. Japan Atomic Energy Research Inst., Takasaki, Gunma (Japan). Takasaki Radiation Chemistry Research Establishment

Description

Effects of 2 MeV electron irradiation on electrical properties of CuInSe2 thin films have been investigated. n-type CuInSe2 films in which carrier concentration were about 2x1017 cm-3, were epitaxially grown on GaAs(001) substrate by RF diode sputtering. No significant change in the electrical properties was observed under the electron fluence less than 1016 cm-2. As the electron fluence exceeded 1017 cm-2, both carrier concentration and Hall mobility slightly decreased. The carrier removal rate was determined to be about 1 cm-1, which was lower than that of III-V compound materials. (author)

Part of:
Proceedings of the 12th international conference on ternary and multinary compounds

Additional details

Publishing Information

Publisher
Butsurikei Gakujutsu-shi Kanko Kyokai
Imprint Place
Tokyo (Japan)
Imprint Title
Proceedings of the 12th international conference on ternary and multinary compounds
Imprint Pagination
545 p.
Journal Page Range
p. 192-193

Conference

Title
12. international conference on ternary and multinary compounds
Acronym
ICTMC-12
Dates
13-17 Mar 2000
Place
Taiwan (China)

Optional Information

Notes
11 refs., 3 figs. Imprint:Japanese Journal of Applied Physics Vol. 39 (2000) Supplement 39-1