Published November 1975
| Version v1
Journal article
Phosphorus diffusion in silicon irradiated by hydrogen ions at elevated temperature
- 1. AN SSSR, Novosibirsk. Inst. Fiziki Poluprovodnikov
Description
no abstract available
Additional details
Additional titles
- Original title (Russian)
- Диффузия фосфора в кремнии под действием облучения ионами водорода при повышенной температуре
Publishing Information
- Journal Title
- Fiz. Tekh. Poluprovodn.
- Journal Volume
- 9
- Journal Issue
- 11
- Series
- Fiz. Tekh. Poluprovodn.
- Journal Page Range
- 2220-2221
INIS
- Country of Publication
- USSR
- Country of Input or Organization
- USSR
- INIS RN
- 8291332
- Subject category
- S75: CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND SUPERFLUIDITY;
- Resource subtype / Literary indicator
- No Abstract
- Descriptors DEI
- ANNEALING; DIFFUSION; DIFFUSION LENGTH; FRENKEL DEFECTS; HYDROGEN IONS 2 PLUS; IMPURITIES; ION IMPLANTATION; KEV RANGE 100-1000; PHOSPHORUS IONS; PHYSICAL RADIATION EFFECTS; SILICON; SPATIAL DISTRIBUTION
- Descriptors DEC
- ATOMIC IONS; CATIONS; CHARGED PARTICLES; CRYSTAL DEFECTS; CRYSTAL STRUCTURE; DISTRIBUTION; ELEMENTS; ENERGY RANGE; HEAT TREATMENTS; HYDROGEN IONS; IONS; KEV RANGE; MOLECULAR IONS; POINT DEFECTS; RADIATION EFFECTS; SEMIMETALS; VACANCIES
Optional Information
- Notes
- Published in summary form only; for English translation see the journal Sov. Phys. - Semicond.