Published November 7, 2014 | Version v1
Journal article

Low energy electron microscopy and Auger electron spectroscopy studies of Cs-O activation layer on p-type GaAs photocathode

  • 1. Institute for Advanced Research, Nagoya University, Nagoya 4648603 (Japan)
  • 2. Departamento de Física, ICEx, Universidade Federal de Minas Gerais, Belo Horizonte, MG 31270-901 (Brazil)
  • 3. NCEM, Lawrence Berkeley National Laboratory, Berkeley, California 94720 (United States)
  • 4. Nagoya University Synchrotron Radiation Research Center, Nagoya 4648603 (Japan)

Description

Work function, photoemission yield, and Auger electron spectra were measured on (001) p-type GaAs during negative electron affinity (NEA) surface preparation, surface degradation, and heating processes. The emission current sensitively depends on work function change and its dependence allows us to determine that the shape of the vacuum barrier was close to double triangular. Regarding the NEA surface degradation during photoemission, we discuss the importance of residual gas components the oxygen and hydrogen. We also found that gentle annealing (≤100 °C) of aged photocathodes results in a lower work function and may offer a patch to reverse the performance degradation

Additional details

Identifiers

Publishing Information

Journal Title
Journal of Applied Physics
Journal Volume
116
Journal Issue
17
Journal Page Range
p. 174509-174509.6
ISSN
0021-8979
CODEN
JAPIAU

Optional Information

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