Published 1996
| Version v1
Report
Open
Radiation-induced charge trapping in bipolar base oxides
- 1. Sandia National Labs., Albuquerque, NM (United States)
- 2. Arizona Univ., Tucson, AZ (United States). Dept. of Electrical and Computer Engineering
Description
Capacitance-voltage and thermally stimulated current methods are used to investigate radiation induced charge trapping in bipolar base oxides. Results are compared with models of oxide and interface trap charge buildup at low electric fields
Availability note (English)
MF available from INIS under the Report Number; Also available from OSTI as DE96006383; NTIS; US Govt. Printing Office Dep.Files
27065021.pdf
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Additional details
Publishing Information
- Imprint Pagination
- 5 p.
- Report number
- SAND--96-0406C
Conference
- Title
- Institute of Electrical and Electronics Engineers/Nuclear and Space Radiation Effects conference.
- Dates
- 15-19 Jul 1996.
- Place
- Indian Wells, CA (United States).
INIS
- Country of Publication
- United States
- Country of Input or Organization
- United States
- INIS RN
- 27065021
- Subject category
- S36: MATERIALS SCIENCE; S42: ENGINEERING; S75: CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND SUPERFLUIDITY;
- Resource subtype / Literary indicator
- Conference
- Descriptors DEI
- CAPACITORS; INTERFACES; OXIDES; P-N JUNCTIONS; PHYSICAL RADIATION EFFECTS; RADIATION DOSES; SEMICONDUCTOR MATERIALS; SOLID STATE PHYSICS; SPACE CHARGE; TRAPPING
- Descriptors DEC
- CHALCOGENIDES; ELECTRICAL EQUIPMENT; ENERGY STORAGE SYSTEMS; EQUIPMENT; MATERIALS; OXYGEN COMPOUNDS; PHYSICS; RADIATION EFFECTS; SEMICONDUCTOR JUNCTIONS
Optional Information
- Contract/Grant/Project number
- Contract AC04-94AL85000
- Funding organization
- Department of Defense, Washington, DC (United States).
- Secondary number(s)
- CONF-960773--1.