Published March 22, 2013 | Version v1
Journal article

VUV light induced valence degeneration in Sm over-layer on HOPG

  • 1. Hiroshima Synchrotron Radiation Center, Hiroshima University, Higashi-hiroshima (Japan)
  • 2. Technical center, Hiroshima University Higashi-hiroshima (Japan)
  • 3. Technical research center, Mazda Motor Corporation, Aki-gun, Hiroshima (Japan)

Description

Systematic investigation of the influence of vacuum ultraviolet (VUV) irradiation on the valence degeneration in a Sm over-layer on a HOPG substrate was performed using in-situ photoemission spectroscopy (XPS, UPS, and ARPES) for the Sm coverage regime of 0.05-3.6 Å. This investigation confirmed that VUV irradiation-induced degeneration of divalent Sm exerts a more profound effect than Sm contamination during photoemission spectroscopy even under UHV. We found that the charge transfer occurs mainly from divalent Sm to the HOPG surface.

Availability note (English)

Available from http://dx.doi.org/10.1088/1742-6596/425/13/132007

Additional details

Publishing Information

Journal Title
Journal of Physics. Conference Series (Online)
Journal Volume
425
Journal Issue
13
Journal Page Range
[4 p.]
ISSN
1742-6596

Conference

Title
11. international conference on synchrotron radiation instrumentation
Acronym
SRI 2012
Dates
9-13 Jul 2012
Place
Lyon (France)

INIS