Published December 1990 | Version v1
Journal article

The effect of ionizing radiation on sol-gel ferroelectric PZT capacitors

  • 1. Harry Diamond Labs., Adelphi, MD (USA)
  • 2. Arizona State Univ., Tempe, AZ (USA). Dept. of Chemical, Bio and Materials Science Engineering

Description

Ferroelectric (FE) thin-film capacitors were irradiated to 100 Mrad(Si) with 10-keV x-rays. Some of the FE hysteresis loops show distortion at 5 Mrad(Si). The type and degree of distortion is dependent upon the polarization state and/or the applied field during irradiation. Preliminary results indicate that a fraction of the radiation-induced damage can be removed simply by cycling the FE capacitor with a 20-Khz square wave. The amount of damage removed is dependent upon the radiation conditions

Additional details

Publishing Information

Journal Title
IEEE Transactions on Nuclear Science
Journal Volume
37
Journal Issue
6
Series
IEEE Trans. Nucl. Sci.
Journal Page Range
1713-1717
ISSN
0018-9499
CODEN
IETNA

Conference

Title
27. IEEE annual conference on nuclear and space radiation effects.
Dates
16-20 Jul 1990.
Place
Reno, NV (USA).

Optional Information

Secondary number(s)
CONF-900723--.