Published February 2011
| Version v1
Journal article
Interfacial structure of V2AlC thin films deposited on (112-bar 0)-sapphire
Creators
- 1. Materials Chemistry, RWTH Aachen University, Mies-van-der-Rohe-Str. 10, 52074 Aachen (Germany)
- 2. Shenyang National Laboratory for Materials Science, Institute of Metal Research, Chinese Academy of Sciences, Shenyang 110016 (China)
- 3. Central Facility for Electron Microscopy, RWTH Aachen University, Ahornstr. 55, D-52074 Aachen (Germany)
Description
Local epitaxy between V2AlC and sapphire without intentionally or spontaneously formed seed layers was observed by transmission electron microscopy. Our ab initio calculations suggest that the most stable interfacial structure is characterized by the stacking sequence ...C-V-Al-V//O-Al..., exhibiting the largest work of separation for the configurations studied and hence strong interfacial bonding. It is proposed that a small misfit accompanied by strong interfacial bonding enable the local epitaxial growth of V2AlC on (112-bar 0)-sapphire.
Availability note (English)
Available from http://dx.doi.org/10.1016/j.scriptamat.2010.10.035Additional details
Identifiers
- DOI
- 10.1016/j.scriptamat.2010.10.035;
- PII
- S1359-6462(10)00728-1;
Publishing Information
- Journal Title
- Scripta Materialia
- Journal Volume
- 64
- Journal Issue
- 4
- Journal Page Range
- p. 347-350
- ISSN
- 1359-6462
- CODEN
- SCMAF7
INIS
- Country of Publication
- United Kingdom
- Country of Input or Organization
- International Atomic Energy Agency (IAEA)
- INIS RN
- 45024487
- Subject category
- S36: MATERIALS SCIENCE;
- Descriptors DEI
- ALUMINIUM CARBIDES; CRYSTAL GROWTH; EPITAXY; INTERFACES; LAYERS; SAPPHIRE; THIN FILMS; TRANSMISSION ELECTRON MICROSCOPY; VANADIUM COMPOUNDS
- Descriptors DEC
- ALUMINIUM COMPOUNDS; CARBIDES; CARBON COMPOUNDS; CORUNDUM; CRYSTAL GROWTH METHODS; ELECTRON MICROSCOPY; FILMS; MICROSCOPY; MINERALS; OXIDE MINERALS; TRANSITION ELEMENT COMPOUNDS
Optional Information
- Copyright
- Copyright (c) 2010 Elsevier Science B.V., Amsterdam, The Netherlands, All rights reserved.