Published July 2017 | Version v1
Journal article

Stability, bonding and electronic structures of halogenated MoS2 monolayer: A first-principles study

  • 1. University of the Chinese Academy of Sciences, Beijing 10004 (China)
  • 2. State Key Laboratory of Magnetic Resonance and Atomic and Molecular Physics, Wuhan Institute of Physics and Mathematics, Chinese Academy of Sciences, Wuhan 430071 (China)

Description

Highlights: • Halogen monomers adsorbed on MoS2 stably inducing magnetic moment of 1μB. • Long range antiferromagneticallyantiferromagnetically couplings are found between halogen adatoms. • Only semifluorinated MoS2 is stable among the four semihalogenated configurations. • Semifluorination leads to a transition from semiconductor to metal of MoS2 monolayer. Surface decoration is a convenient and effective way to tune the properties of two dimensional (2D) materials. Here we performed a first-principles study of the functionalization of MoS2 monolayer by halogen atoms (F, Cl, Br and I). The adsorption of halogen monomer, halogen dimer on MoS2 monolayer, and the halogenation of one side of MoS2 were studied. Halogen monomers can adsorb stably on MoS2 inducing impurity states and magnetic moment of 1.0 μB per supercell. Long range antiferromagnetic (AFM) couplings are found between halogen adatoms. Semihalogenated Cl- and Br-MoS2 can be in nonbonding or bonding state, with the nonbonding state being more energetic favorable. Semihalogenated I-MoS2 can only be in nonbonding state. Semifluorinated F-MoS2 can stabilize in bonding state with a titled configuration and large binding energy. MoS2 monolayer is transferred from a semiconductor to metal upon semifluorination.

Availability note (English)

Available from http://dx.doi.org/10.1016/j.physe.2017.04.005

Additional details

Identifiers

DOI
10.1016/j.physe.2017.04.005;
PII
S1386947717302540;

Publishing Information

Journal Title
Physica E. Low-Dimensional Systems and Nanostructures (Print)
Journal Volume
91
Journal Page Range
p. 8-14
ISSN
1386-9477

Optional Information

Copyright
Copyright (c) 2017 Elsevier B.V. All rights reserved.