Published May 1991
| Version v1
Journal article
Planar silicon ion detectors with high energy resolution
Description
Analysis of factors determining resolution of silicon planar detectors with p+-n-junction obtained due to ion implantation techniques (PIPS) or small diffusion techniques (PDPS), is carried out. Resolution of PDPS-detectors constitutes 8.1 keV
Additional details
Additional titles
- Original title (Russian)
- Кремниевые планарные детекторы ионов с высоким энергетическим разрешением
Publishing Information
- Journal Title
- Pribory i Tekhnika Ehksperimenta
- Journal Issue
- no.3
- Journal Page Range
- p. 56-61.
- ISSN
- 0032-8162
- CODEN
- PRTEAJ
INIS
- Country of Publication
- Russian Federation
- Country of Input or Organization
- Russian Federation
- INIS RN
- 24059779
- Subject category
- S46: INSTRUMENTATION RELATED TO NUCLEAR SCIENCE AND TECHNOLOGY;
- Descriptors DEI
- ALPHA SPECTRA; ENERGY RESOLUTION; ERRORS; ION DETECTION; ION IMPLANTATION; KEV RANGE 100-1000; P-N JUNCTIONS; SI SEMICONDUCTOR DETECTORS
- Descriptors DEC
- CHARGED PARTICLE DETECTION; DETECTION; ENERGY RANGE; KEV RANGE; MEASURING INSTRUMENTS; RADIATION DETECTION; RADIATION DETECTORS; RESOLUTION; SEMICONDUCTOR DETECTORS; SEMICONDUCTOR JUNCTIONS; SPECTRA