Published 2004 | Version v1
Journal article

(Ba, Sr) TiO3 ferroelectric thin films for tunable microwave applications

  • 1. Naval Research Laboratory, 4555 Overlook Avenue SW, Washington DC 20375 (United States)
  • 2. Department of Materials Science and Engineering, Penn State University, University Park, PA 16802 (United States)

Description

The dielectric properties of ferroelectric thin films were investigated for tunable microwave applications. We have observed that epitaxially grown Ba1-x Srx TiO3 (BST, 0.4 ≤ X ≤ 1 ) films are distorted from the normal cubic symmetry of the corresponding bulk at room temperature. This structural distortion caused by film strain has a strong impact on the microwave dielectric properties. For compressive strain, the dielectric constant and tuning were decreased and the films showed high dielectric Q. However for tensional strain, the opposite effect was observed. This observation has been interpreted based on phenomenological thermodynamics and strain-induced polarization physics. Two experimental examples, strain-relieved films and strain-enabled films, are presented to show how film strain affects the tunable microwave properties. (Author) 21 refs., 8 figs

Additional details

Publishing Information

Journal Title
Revista Mexicana de Fisica
Journal Volume
50
Journal Issue
5
Journal Page Range
p. 501-505
ISSN
0035-001X
CODEN
RMXFAT