Fabrication and characterization of fully depleted surface barrier detectors

Fabrication of fully depleted surface barrier type thin detectors needs thin silicon wafer of 20 - 30 μm thickness and flatness of ± 1 μm. Process has been developed for thinning silicon wafers to achieve thickness up to 20 - 30 μm from thicker (0.5 - 0.8 mm) silicon samples. These samples were used to fabricate fully depleted surface barrier detectors using Au contacts on n-type silicon. The detectors were characterized by measuring forward and reverse I-V characteristics and alpha energy spectra of Am-Pu source. (author)