Surface characterization of ZnO nanorods grown by chemical bath deposition
Creators
- 1. Department of Physics, Nelson Mandela Metropolitan University, P.O. Box 77000, Port Elizabeth 6031 (South Africa)
- 2. Department of Physics, University of the Free State, P.O Box 77000, Bloemfontein ZA9300 (South Africa)
Description
The surface composition of as-grown and annealed ZnO nanorods (ZNs) grown by a two-step chemical bath deposition method is investigated by the following surface-sensitive techniques: Time-of-Flight Secondary Ion Mass Spectroscopy (TOF-SIMS), X-ray Photoelectron Spectroscopy (XPS) and Auger Electron Spectroscopy (AES). The presence of H on the surface and throughout the entire thickness of ZNs is confirmed by TOF-SIMS. Based on TOF-SIMS results, the O2 XPS peak mostly observable at ~531.5 is assigned to O bound to H. Furthermore, it is found that the near surface region of as-grown ZNs is Zn-rich, and annealing at high temperature (~850 °C) removes H-related defects from the surface of ZNs and affect the balance of zinc and oxygen concentrations.
Availability note (English)
Available from http://dx.doi.org/10.1016/j.physb.2015.07.016Additional details
Identifiers
- DOI
- 10.1016/j.physb.2015.07.016;
- PII
- S0921-4526(15)30132-0;
Publishing Information
- Journal Title
- Physica. B, Condensed Matter
- Journal Volume
- 480
- Journal Page Range
- p. 42-47
- ISSN
- 0921-4526
- CODEN
- PHYBE3
Conference
- Title
- 6. South African conference on photonic materials
- Acronym
- SACPM 2015
- Dates
- 5-7 May 2015
- Place
- Mabula Game Lodge (South Africa)
INIS
- Country of Publication
- Netherlands
- Country of Input or Organization
- International Atomic Energy Agency (IAEA)
- INIS RN
- 48011868
- Subject category
- S75: CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND SUPERFLUIDITY;
- Resource subtype / Literary indicator
- Conference
- Descriptors DEI
- ANNEALING; AUGER ELECTRON SPECTROSCOPY; CONCENTRATION RATIO; DEPOSITION; ION MICROPROBE ANALYSIS; MASS SPECTROSCOPY; NANOSTRUCTURES; OXYGEN; PEAKS; SURFACES; TEMPERATURE RANGE 1000-4000 K; TIME-OF-FLIGHT METHOD; X-RAY PHOTOELECTRON SPECTROSCOPY; ZINC OXIDES; ZINC SULFIDES
- Descriptors DEC
- CHALCOGENIDES; CHEMICAL ANALYSIS; DIMENSIONLESS NUMBERS; ELECTRON SPECTROSCOPY; ELEMENTS; HEAT TREATMENTS; INORGANIC PHOSPHORS; MICROANALYSIS; NONDESTRUCTIVE ANALYSIS; NONMETALS; OXIDES; OXYGEN COMPOUNDS; PHOSPHORS; PHOTOELECTRON SPECTROSCOPY; SPECTROSCOPY; SULFIDES; SULFUR COMPOUNDS; TEMPERATURE RANGE; ZINC COMPOUNDS
Optional Information
- Copyright
- Copyright (c) 2015 Elsevier Science B.V., Amsterdam, The Netherlands, All rights reserved.